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• W2990551475 abstract "The fabrication of silicon-based (Si) structures via a combination of various techniques, and their use as sensitive elements is shown. Application of alkaline etching allowed to obtain the pyramidal Si structures, on the basis of which the stationary electrode of an accelerometer has been made. The movable electrode of an accelerometer was fabricated through the approach based on silicon-on-insulator (SOI) technology. The studies of output characteristics of the developed accelerometer have shown its high sensitivity, and ability to work in harsh conditions, including low temperatures, high magnetic fields, and high values of an electric field strength." @default.
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• W2990551475 date "2018-09-01" @default.
• W2990551475 modified "2023-10-16" @default.
• W2990551475 title "Development of Silicon-Based Structures for Micro-and Nanosystem Devices Operable in Harsh Conditions" @default.
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• W2990551475 doi "https://doi.org/10.1109/nap.2018.8915031" @default.
• W2990551475 hasPublicationYear "2018" @default.
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