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• W2990570079 abstract "This paper reports the phenomenon of single event dielectric rupture (SEDR) in amorphous silicon (α-Si) materials. Heavy ion induced failures in α-Si MIM structures were studied for LETs from 37 MeV-cm2/mg to 99 MeV-cm2/mg to assessing the risk of SEGR. The failure voltage threshold for SEDR was found to be inversely proportional to the ion LET and however independent to α-Si thickness to a certain extent. Based on the current transport behavior of the metal-amorphous films contacts, it is presumed that the charges injecting into the heavy ion induced plasma pipe occur under saturated velocity conditions for α-Si MIM structures." @default.
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• W2990570079 date "2018-05-01" @default.
• W2990570079 modified "2023-09-27" @default.
• W2990570079 title "Single Event Dielectric Rupture Phenomenon in Amorphous Silicon based MIM Structures" @default.
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• W2990570079 doi "https://doi.org/10.1109/icreed.2018.8905078" @default.
• W2990570079 hasPublicationYear "2018" @default.
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