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- W2991581982 abstract "This paper presents a circuit-level analytical switching model for a 1200 V SiC MOSFET in a high-voltage, high-frequency pulsed power supply for the application of plasma generation. The proposed analytical model considers the parasitic components in the converter. To increase the accuracy of the model, nonlinearities in the junction capacitances and transconductance are incorporated by fitting their nonlinear characteristics into the model. The turn-on and turn-off transitions are analyzed in detail and the modeling mathematical equations are resolved by the MATLAB ode-45 command. The accuracy of this model is validated by comparing the analytical, LTspice simulated and experimental switching waveforms of a 400 VDC input, -8.2kV output prototype. The proposed model enables us to evaluate and optimize the switching solution of a SiC MOSFET for pulsed power converter applications" @default.
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- W2991581982 date "2019-09-01" @default.
- W2991581982 modified "2023-09-24" @default.
- W2991581982 title "Analytical Switching Model of a 1200V SiC MOSFET in a High-voltage, High-frequency Pulsed Power Converter for Plasma Generation" @default.
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- W2991581982 doi "https://doi.org/10.1109/ecce.2019.8911911" @default.
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