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- W2993405471 endingPage "109121" @default.
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- W2993405471 abstract "CZTS precursors with different Cu concentration deposited by magnetron sputtering were annealed under H2Se and Ar hybrid atmosphere to obtain CZTSSe absorbers. A series of characterization techniques were carried out to investigate the influences of Cu concentration on phase structures and electrical properties of CZTSSe absorbers. Results showed that device performance is very susceptible to the Cu/(Zn + Sn) ratio. The increase of Cu concentration in the absorbers will likely result in the formation of cooper-containing secondary phases, which can reduce short-circuit current so that deteriorating device performance. Moreover, the higher Cu concentration leads to the higher carrier density and the shorter depletion region width, resulting in the decline of devices performance. In the case of the sample with Cu/(Zn + Sn) ratio of 0.70 in the precursor, CZTSSe absorber can achieve an appropriate electrical property, a homogeneous morphology with micron-sized particles, and a pure phase structure without obvious detrimental secondary phases. The highest power conversion efficiency of 9.13% in CZTSSe solar cells was achieved in this work." @default.
- W2993405471 created "2019-12-13" @default.
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- W2993405471 date "2020-03-01" @default.
- W2993405471 modified "2023-09-25" @default.
- W2993405471 title "Influences of Cu concentration on electrical properties of CZTSSe absorbers and their device performances" @default.
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- W2993405471 doi "https://doi.org/10.1016/j.vacuum.2019.109121" @default.
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