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- W2993669756 abstract "In order to solve the SiC MOSFETs application problems including asymmetric gate voltage, low threshold voltage, lower short circuit withstand time, higher voltage and current transient rate (dv/dt, di/dt) at switching, this paper proposes a novel SiC MOSFET gate driver with ultra-small size integrated a high performance isolated DC-DC converter. The DC-DC power supply with low coupling capacitance and the active gate Miller clamp are used to reducing the influence of high dv/dt which is produced during switch transition. In addition, the proposed gate driver has a rapid short circuit protection with soft shut down up to 300 kHz switching frequency. Experimental results for a double-pulse test (DPT) bench is presented, demonstrating the anticipative driving effect, rapid protection and high dv/dt immunity. Moreover, thanks to the good performance and ultra-small size, the gate driver has been applied to a xEV drivetrain inverter." @default.
- W2993669756 created "2019-12-13" @default.
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- W2993669756 date "2019-08-01" @default.
- W2993669756 modified "2023-09-23" @default.
- W2993669756 title "Designing a SiC MOSFETs Gate Driver with High dv/dt Immunity and Rapid Short Circuit Protection for xEV Drivetrain Inverter" @default.
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- W2993669756 doi "https://doi.org/10.1109/icems.2019.8922429" @default.
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