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- W2995367041 abstract "In this paper, the performance of copper-indium-gallium-diselenide Cu(In,Ga)Se 2 solar cell, with ZnO window layer, ZnSe buffer layer, CIGS absorber layer and InGaP reflector layer was studied. The study was performed using the TCAD Silvaco simulator. The effects of grading the band gap of CIGS absorber layer, the various thicknesses and doping concentrations of different layers have been investigated. By optimizing the solar cell structure, we have obtained a maximum open circuit voltage of 0.91901 V, a short circuit current density of 39.89910 mA/cm 2 , a fill factor (FF) of 86.67040% and an efficiency of 31.78% which is much higher than the values for similar CIGS solar cells reported so far." @default.
- W2995367041 created "2019-12-26" @default.
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- W2995367041 date "2019-12-20" @default.
- W2995367041 modified "2023-10-03" @default.
- W2995367041 title "High-efficiency CIGS solar cell by optimization of doping concentration, thickness and energy band gap" @default.
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- W2995367041 doi "https://doi.org/10.1142/s0217984920500530" @default.
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