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- W2997376002 abstract "The photoemission process is generally surface sensitive, and therefore is not typically applied to the examination of buried structures or interfaces. Using photoemission electron microscopy with deep-ultraviolet excitation, this study exploits the formation of optical standing waves to enable visualization of atomically thin MoS${}_{2}$ tens of nanometers below the surface of dielectric films. This approach is potentially useful for imaging buried nanostructures or nanomaterials, a keenly sought capability in diagnostics for optoelectronic components." @default.
- W2997376002 created "2020-01-10" @default.
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- W2997376002 date "2019-12-31" @default.
- W2997376002 modified "2023-10-14" @default.
- W2997376002 title "Imaging Atomically Thin Semiconductors Beneath Dielectrics via Deep Ultraviolet Photoemission Electron Microscopy" @default.
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- W2997376002 doi "https://doi.org/10.1103/physrevapplied.12.064064" @default.
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