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- W2999435078 abstract "High electron mobility is pivotal in engineering oxide interfaces for electronic devices. Here, interfacial structure and physical behaviors of $ensuremath{gamma}text{ensuremath{-}}{mathrm{Al}}_{2}{mathrm{O}}_{3}/{mathrm{SrTiO}}_{3}$ spinel/perovskite heterostructure are explored to understand the microscopic origin of its extremely high electron mobility $(1.4ifmmodetimeselsetexttimesfi{}{10}^{5}phantom{rule{4pt}{0ex}}{mathrm{cm}}^{2}phantom{rule{4pt}{0ex}}{mathrm{V}}^{ensuremath{-}1}phantom{rule{4pt}{0ex}}{mathrm{s}}^{ensuremath{-}1}$ at 2 K). Lattice mismatch at interface and intrinsic Al cation vacancies result in unexpected interfacial reconstruction and anisotropic electronic behavior. The spontaneous polarization in the $ensuremath{gamma}text{ensuremath{-}}{mathrm{Al}}_{2}{mathrm{O}}_{3}$ part leads to an insulator-metal transition observed experimentally, even if the thickness of $ensuremath{gamma}text{ensuremath{-}}{mathrm{Al}}_{2}{mathrm{O}}_{3}$ is only one unit cell, and a strong internal electric field can be as large as 142 mV/AA{}, roughly 1.8 times the experimentally observed value of 80.1 mV/AA{} in ${mathrm{LaAlO}}_{3}/{mathrm{SrTiO}}_{3}$. As a result, unlike only in-plane slightly occupied $mathrm{Ti}text{ensuremath{-}}{d}_{xy}$ subbands in the conventional ${mathrm{SrTiO}}_{3}$-based perovskite/perovskite heterostructure, all three ${t}_{2g}$ orbitals have charge exchange with the surfacial $mathrm{O}text{ensuremath{-}}2p$ orbitals in $ensuremath{gamma}text{ensuremath{-}}{mathrm{Al}}_{2}{mathrm{O}}_{3}/{mathrm{SrTiO}}_{3}$; especially, the preferential orbital occupation is out-of-plane $mathrm{Ti}text{ensuremath{-}}{d}_{xz}/mathrm{Ti}text{ensuremath{-}}{d}_{yz}$ at the interface. Nontrivial orbital occupation and complicated interfacial reconstruction result in large group velocity and a high density of states at the Fermi level and therefore serve as the origins of extremely high electron mobility and high carrier concentration. The physical mechanism revealed in our work offers insight into the creation of high-mobility nanoscale electronic devices." @default.
- W2999435078 created "2020-01-23" @default.
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- W2999435078 date "2020-01-13" @default.
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- W2999435078 title "Orbital-adapted electronic structure and anisotropic transport in <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mi>γ</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=normal>O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>SrTiO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math> heterostructure" @default.
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- W2999435078 doi "https://doi.org/10.1103/physrevmaterials.4.016001" @default.
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