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• W2999833223 abstract "In this article, we investigate the impact of the hot carrier (HC) aging on the performance of nanoscale n-channel triple-gate junctionless MOSFETs with channel length varying from 95 down to 25 nm. The devices were electrically stressed in the ON-state region of operation at fixed gate voltage V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>g</sub> = 1.8 V and drain bias V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>d</sub> = 1.8 V, with the stress time being a variable parameter. The device degradation was monitored through the relative change with stress time of the threshold voltage, subthreshold swing, linear drain current, low-field mobility, series resistance, and gate current. For relatively long-channel transistors (L = 95 nm), the threshold voltage and the subthreshold swing remain almost unchanged, whereas the ON-state drain current is degraded showing a good correlation with the series resistance degradation, caused by HC-induced damage in the drain region. For short-channel transistor (L = 45 nm), the HC-induced damage is extended in the channel region: interface traps are generated, exhibiting good correlation with both threshold voltage and low-field mobility degradations. For the very short-channel device (L = 25 nm), after long stress time, the HC-induced interface degradation is severe, causing a continuous increase of the ideality factor with increasing the gate voltage." @default.
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• W2999833223 date "2020-02-01" @default.
• W2999833223 modified "2023-10-17" @default.
• W2999833223 title "Impact of Hot Carrier Aging on the Performance of Triple-Gate Junctionless MOSFETs" @default.
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• W2999833223 doi "https://doi.org/10.1109/ted.2019.2958457" @default.
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