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- W2999932424 abstract "The slowdown of the CMOS technology scaling, and the trade-off between efficiency and flexibility have fueled the exploration into novel architectures with emerging post-CMOS technology [e.g., resistive-RAM (RRAM)]. In this article, a nonvolatile fully programmable processing-in-memory (PIM) processor named Liquid Silicon is demonstrated, which combines the superior programmability of general-purpose computing devices [e.g., field-programmable gate array (FPGA)] and the high efficiency of domain-specific accelerators. Besides the general computing applications, Liquid Silicon is particularly well suited for artificial intelligence (AI)/machine learning and big data applications, which not only poses high computational/memory demand but also evolves rapidly. To fabricate the Liquid Silicon chip, the HfO2 RRAM is monolithically integrated on top of the commercial 130 nm CMOS. Our measurement confirms that Liquid Silicon chip can operate reliably at a low voltage of 650 mV. It achieves 60.9 TOPS/W in performing neural network (NN) inferences, and 480 GOPS/W in performing content-based similarity search (a key big data application) at a nominal voltage supply of 1.2 V, showing $3times $ and $100times $ improvement over the state-of-the-art domain-specific CMOS-/RRAM-based accelerators. In addition, it outperforms the latest nonvolatile FPGA in energy efficiency by $3times $ in general computing applications." @default.
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- W2999932424 date "2020-04-01" @default.
- W2999932424 modified "2023-10-18" @default.
- W2999932424 title "Liquid Silicon: A Nonvolatile Fully Programmable Processing-in-Memory Processor With Monolithically Integrated ReRAM" @default.
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- W2999932424 doi "https://doi.org/10.1109/jssc.2019.2963005" @default.
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