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- W3000617230 abstract "We demonstrate silicon-based <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>p</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>n</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>p</mml:mi> </mml:math> floating-base GeSn heterojunction phototransistors with enhanced optical responsivity for efficient short-wave infrared (SWIR) photodetection. The narrow-bandgap GeSn active layer sandwiched between the <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>p</mml:mi> <mml:mtext>-</mml:mtext> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>G</mml:mi> <mml:mi mathvariant=normal>e</mml:mi> </mml:mrow> </mml:math> collector and <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>n</mml:mi> <mml:mtext>-</mml:mtext> <mml:mrow class=MJX-TeXAtom-ORD> <mml:mi mathvariant=normal>G</mml:mi> <mml:mi mathvariant=normal>e</mml:mi> </mml:mrow> </mml:math> base effectively extends the photodetection range in the SWIR range, and the internal gain amplifies the optical response by a factor of more than three at a low driving voltage of 0.4 V compared to that of a reference GeSn <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML display=inline> <mml:mi>p</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>i</mml:mi> <mml:mtext>-</mml:mtext> <mml:mi>n</mml:mi> </mml:math> photodetector (PD). We anticipate that our findings will be leveraged to realize complementary metal-oxide-semiconductor-compatible, sensitive, low driving voltage SWIR PDs in a wide range of applications." @default.
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- W3000617230 date "2020-02-18" @default.
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- W3000617230 title "Silicon-based high-responsivity GeSn short-wave infrared heterojunction phototransistors with a floating base" @default.
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- W3000617230 doi "https://doi.org/10.1364/ol.383171" @default.
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