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• W3001721364 abstract "In this work, we report on a model that describes the microscopic electrical transport as a transmission problem using the invariant embedding technique. Analytical expressions for the transport coefficients under non-steady-state conditions are derived allowing us to calculate carrier concentration and time-dependent conductivity. Employing measurable magnitudes, our theoretical results allow us to determine defect concentrations, carrier generation rates, cross sections of recombination, and capture by traps. This model can be employed to study the conduction processes of semiconductors and test their band and defect structure. In particular, time-dependent photoconductivity measurements of a ZnO microwire have been well fitted using our model indicating a relevant role of intrinsic point defects in this material." @default.
• W3001721364 created "2020-01-30" @default.
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• W3001721364 date "2020-01-22" @default.
• W3001721364 modified "2023-10-08" @default.
• W3001721364 title "Non-steady state transport of charge carriers. An approach based on invariant embedding method" @default.
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• W3001721364 doi "https://doi.org/10.1063/1.5136090" @default.
• W3001721364 hasPublicationYear "2020" @default.
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