FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3002607654> ?p ?o ?g. }

• W3002607654 endingPage "57" @default.
• W3002607654 startingPage "57" @default.
• W3002607654 abstract "We demonstrate the feasibility of growing GaAs nanomembranes on a plastically-relaxed Ge layer deposited on Si (111) by exploiting selective area epitaxy in MBE. Our results are compared to the case of the GaAs homoepitaxy to highlight the criticalities arising by switching to heteroepitaxy. We found that the nanomembranes evolution strongly depends on the chosen growth parameters as well as mask pattern. The selectivity of III-V material with respect to the SiO2 mask can be obtained when the lifetime of Ga adatoms on SiO2 is reduced, so that the diffusion length of adsorbed Ga is high enough to drive the Ga adatoms towards the etched slits. The best condition for a heteroepitaxial selective area epitaxy is obtained using a growth rate equal to 0.3 ML/s of GaAs, with a As BEP pressure of about 2.5 × 10−6 torr and a temperature of 600 °C." @default.
• W3002607654 created "2020-01-30" @default.
• W3002607654 creator A5014667264 @default.
• W3002607654 creator A5017248371 @default.
• W3002607654 creator A5021313507 @default.
• W3002607654 creator A5031868432 @default.
• W3002607654 creator A5041178434 @default.
• W3002607654 creator A5044354595 @default.
• W3002607654 creator A5059327252 @default.
• W3002607654 creator A5078913922 @default.
• W3002607654 creator A5085147282 @default.
• W3002607654 date "2020-01-22" @default.
• W3002607654 modified "2023-09-26" @default.
• W3002607654 title "Selective Area Epitaxy of GaAs/Ge/Si Nanomembranes: A Morphological Study" @default.
• W3002607654 cites W1953870125 @default.
• W3002607654 cites W1966422253 @default.
• W3002607654 cites W1975112724 @default.
• W3002607654 cites W2000999566 @default.
• W3002607654 cites W2011507986 @default.
• W3002607654 cites W2052138988 @default.
• W3002607654 cites W2052940294 @default.
• W3002607654 cites W2055874340 @default.
• W3002607654 cites W2078506594 @default.
• W3002607654 cites W2086920916 @default.
• W3002607654 cites W2096919216 @default.
• W3002607654 cites W2278417325 @default.
• W3002607654 cites W2313457253 @default.
• W3002607654 cites W2316821113 @default.
• W3002607654 cites W2319179449 @default.
• W3002607654 cites W2564380681 @default.
• W3002607654 cites W2567126059 @default.
• W3002607654 cites W2890095601 @default.
• W3002607654 cites W2905421639 @default.
• W3002607654 cites W2911999293 @default.
• W3002607654 cites W2943789518 @default.
• W3002607654 cites W2958989040 @default.
• W3002607654 cites W2990460882 @default.
• W3002607654 cites W2992815577 @default.
• W3002607654 doi "https://doi.org/10.3390/cryst10020057" @default.
• W3002607654 hasPublicationYear "2020" @default.
• W3002607654 type Work @default.
• W3002607654 sameAs 3002607654 @default.
• W3002607654 citedByCount "7" @default.
• W3002607654 countsByYear W30026076542020 @default.
• W3002607654 countsByYear W30026076542021 @default.
• W3002607654 countsByYear W30026076542022 @default.
• W3002607654 countsByYear W30026076542023 @default.
• W3002607654 crossrefType "journal-article" @default.
• W3002607654 hasAuthorship W3002607654A5014667264 @default.
• W3002607654 hasAuthorship W3002607654A5017248371 @default.
• W3002607654 hasAuthorship W3002607654A5021313507 @default.
• W3002607654 hasAuthorship W3002607654A5031868432 @default.
• W3002607654 hasAuthorship W3002607654A5041178434 @default.
• W3002607654 hasAuthorship W3002607654A5044354595 @default.
• W3002607654 hasAuthorship W3002607654A5059327252 @default.
• W3002607654 hasAuthorship W3002607654A5078913922 @default.
• W3002607654 hasAuthorship W3002607654A5085147282 @default.
• W3002607654 hasBestOaLocation W30026076541 @default.
• W3002607654 hasConcept C110738630 @default.
• W3002607654 hasConcept C118792377 @default.
• W3002607654 hasConcept C121332964 @default.
• W3002607654 hasConcept C161790260 @default.
• W3002607654 hasConcept C171250308 @default.
• W3002607654 hasConcept C185592680 @default.
• W3002607654 hasConcept C192562407 @default.
• W3002607654 hasConcept C2779227376 @default.
• W3002607654 hasConcept C30646810 @default.
• W3002607654 hasConcept C3792809 @default.
• W3002607654 hasConcept C49040817 @default.
• W3002607654 hasConcept C55493867 @default.
• W3002607654 hasConcept C69357855 @default.
• W3002607654 hasConcept C97355855 @default.
• W3002607654 hasConceptScore W3002607654C110738630 @default.
• W3002607654 hasConceptScore W3002607654C118792377 @default.
• W3002607654 hasConceptScore W3002607654C121332964 @default.
• W3002607654 hasConceptScore W3002607654C161790260 @default.
• W3002607654 hasConceptScore W3002607654C171250308 @default.
• W3002607654 hasConceptScore W3002607654C185592680 @default.
• W3002607654 hasConceptScore W3002607654C192562407 @default.
• W3002607654 hasConceptScore W3002607654C2779227376 @default.
• W3002607654 hasConceptScore W3002607654C30646810 @default.
• W3002607654 hasConceptScore W3002607654C3792809 @default.
• W3002607654 hasConceptScore W3002607654C49040817 @default.
• W3002607654 hasConceptScore W3002607654C55493867 @default.
• W3002607654 hasConceptScore W3002607654C69357855 @default.
• W3002607654 hasConceptScore W3002607654C97355855 @default.
• W3002607654 hasIssue "2" @default.
• W3002607654 hasLocation W30026076541 @default.
• W3002607654 hasLocation W30026076542 @default.
• W3002607654 hasLocation W30026076543 @default.
• W3002607654 hasOpenAccess W3002607654 @default.
• W3002607654 hasPrimaryLocation W30026076541 @default.
• W3002607654 hasRelatedWork W1976889585 @default.
• W3002607654 hasRelatedWork W1982864195 @default.
• W3002607654 hasRelatedWork W2020765697 @default.
• W3002607654 hasRelatedWork W2043481793 @default.
• W3002607654 hasRelatedWork W2058676402 @default.
• W3002607654 hasRelatedWork W2068209533 @default.

• next