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- W3003303157 abstract "For present and future mm- and sub-mm-wave applications, compact models need to capture the large-signal dynamic transistor behavior up to several harmonics, which are often far beyond the transistor cut-off frequencies. Since such such frequencies exceed the existing or usually affordable measurement capability, a physically and mathematically sound approach for developing compact models is required that guarantees a desired level of accuracy. This paper demonstrates the construction of physics-based equivalent circuits for the intrinsic transistor operation based on a closed-form solution of the DD transport and continuity equation. The solutions are verified based on device simulation." @default.
- W3003303157 created "2020-02-07" @default.
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- W3003303157 date "2019-11-01" @default.
- W3003303157 modified "2023-10-16" @default.
- W3003303157 title "Mathematical foundation for constructing accurate dynamic bipolar transistor compact models" @default.
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- W3003303157 doi "https://doi.org/10.1109/bcicts45179.2019.8972737" @default.
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