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- W3004044458 abstract "We investigated the effects of Si and Mg doping concentrations in the guide layers on the threshold power density of an AlGaN-based optically pumped ultraviolet-B band (UV-B) laser. For Si, a decrease in the threshold power density required for laser oscillation was confirmed at doping concentrations up to an order of 1017 cm−3. However, an increase was confirmed at high concentrations of approximately 1018 cm−3. For Mg doping, no decrease in the threshold power density of the optically pumped laser was confirmed even at low Mg concentrations, and it increased rapidly at 1018 cm−3. These results were characterized by weakly excited photoluminescence and variable stripe length, indicating that they were due to changes in optical gain with increasing or decreasing internal quantum efficiency and changes in internal loss. This suggests that Mg doping of the guide layer in UV-B lasers should be lower than 1018 cm−3 to realize low-threshold power density lasers. On the other hand, doping on an order of up to 1017 cm−3 for Si was effective at reducing the threshold power density. This indicates that the threshold power density increases if it is too high. These results could provide guidance for designing UV-B lasers in the future." @default.
- W3004044458 created "2020-02-07" @default.
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- W3004044458 date "2020-04-01" @default.
- W3004044458 modified "2023-10-16" @default.
- W3004044458 title "Effects of Mg and Si doping in the guide layers of AlGaN-based ultraviolet-B band lasers" @default.
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- W3004044458 doi "https://doi.org/10.1016/j.jcrysgro.2020.125537" @default.
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