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- W3004288329 abstract "Abstract This paper introduces the recent progress in methodologies and their related applications based on the soft x-ray interference lithography beamline in the Shanghai synchrotron radiation facility. Dual-beam, multibeam interference lithography and Talbot lithography have been adopted as basic methods in the beamline. To improve the experimental performance, a precise real-time vibration evaluation system has been established; and the lithography stability has been greatly improved. In order to meet the demands for higher resolution and practical application, novel experimental methods have been developed, such as high-order diffraction interference exposure, high-aspect-ratio and large-area stitching exposure, and parallel direct writing achromatic Talbot lithography. As of now, a 25 nm half-pitch pattern has been obtained; and a cm 2 exposure area has been achieved in practical samples. The above methods have been applied to extreme ultraviolet photoresist evaluation, photonic crystal and surface plasmonic effect research, and so on." @default.
- W3004288329 created "2020-02-07" @default.
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- W3004288329 date "2020-02-26" @default.
- W3004288329 modified "2023-10-12" @default.
- W3004288329 title "The recent development of soft x-ray interference lithography in SSRF" @default.
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- W3004288329 doi "https://doi.org/10.1088/2631-7990/ab70ae" @default.
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