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- W3005132250 abstract "To provide a guideline for converter design and fault protection, the failure mechanism and reliability of silicon carbide (SiC) power MOSFETs needs to be further investigated. In this paper, the failure mechanism during short-circuit (SC) of commercial 1.2-KV/19-A SiC power MOSFETs was investigated. After the SC tests, the I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ds</sub> of the device decreased significantly. Moreover, it was found that the V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>th</sub> and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gs</sub> increased obviously. The results demonstrated that negative charges were captured by the gate oxide and accumulated during the SC tests, which is eventually causes degradation of the gate oxide. The results of this study may be useful in the design and application of SiC power MOSFETs." @default.
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- W3005132250 date "2019-07-01" @default.
- W3005132250 modified "2023-10-16" @default.
- W3005132250 title "Investigations on the Short-Circuit Degradation and its Mechanism of 1.2-KV 19-A SiC power MOSFETs" @default.
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- W3005132250 doi "https://doi.org/10.1109/ipfa47161.2019.8984829" @default.
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