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• W3005363078 startingPage "038001" @default.
• W3005363078 abstract "The internal electric field caused by the strain-induced piezoelectric polarization in InGaN-based single- or multiple-quantum-well light-emitting diodes (LEDs) is measured by using electroreflectance spectroscopy. The piezoelectric fields (FPZ's) in InGaN LEDs from near-ultraviolet to green spectra (In-compositions of ∼3% to ∼30%) are measured to understand the effect of In-composition on FPZ. A second-order polynomial as a function of In-composition is proposed from these FPZ values as a guideline for future research. The experimental trend has a good agreement with the theoretical prediction for low (<15%) In-compositions. However, the trend diverges from the theoretical prediction at high In-compositions due to defect incorporation into the lattice. The observed effects of epitaxial structures and point defects on FPZ are systematically explained." @default.
• W3005363078 created "2020-02-14" @default.
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• W3005363078 date "2020-02-19" @default.
• W3005363078 modified "2023-09-26" @default.
• W3005363078 title "Piezoelectric field in InGaN-based quantum wells grown on <i>c</i>-plane sapphire substrates measured by electroreflectance spectroscopy: from near-ultraviolet to green spectra" @default.
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• W3005363078 doi "https://doi.org/10.35848/1347-4065/ab7356" @default.
• W3005363078 hasPublicationYear "2020" @default.
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