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• W3007029163 abstract "Aluminum oxide thin films fabricated via atomic layer deposition are introduced as passivating tunneling interlayers between hole-selective molybdenum oxide contacts and silicon absorbers. Surface recombination velocity and specific contact resistivity are reported as a function of Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> thickness. The effects of substrate chemical pretreatment, the thermal history of the Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> layers prior to MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> deposition, and the thermal history of the completed Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> /MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> stacks were also investigated. When an SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> /Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> passivating stack was incorporated and the completed test structure was annealed at 200 °C, the observed recombination velocities were reduced from ~10 000 cm/s for an unpassivated (initially hydrogen-terminated) Si/MoO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</sub> direct contact to ~500 cm/s, while maintaining a contact resistivity at or below 0.1 Ω·cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> . The data demonstrate the capability of ultrathin Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> to improve Si/MoOx contact properties and may be of interest in the design of future Si heterojunctions." @default.
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• W3007029163 date "2020-05-01" @default.
• W3007029163 modified "2023-10-16" @default.
• W3007029163 title "Aluminum Oxide Passivating Tunneling Interlayers for Molybdenum Oxide Hole-Selective Contacts" @default.
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• W3007029163 doi "https://doi.org/10.1109/jphotov.2020.2973447" @default.
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