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- W3009165240 endingPage "4689" @default.
- W3009165240 startingPage "4684" @default.
- W3009165240 abstract "In this paper, we investigated the threshold voltage ( V th ) variations in sub 5-nm node silicon nanosheet FETs (NSFETs) caused by Ge and C diffusion into NS channels using fully-calibrated 3-D TCAD simulation. Ge (C) atoms of Si 1− x Ge x (Si 1− x C x ) source/drain (S/D) diffuse toward the NS channels in lateral direction in p -type ( n -type) FETs, and Ge atoms of Si 0.7 Ge 0.3 stacks diffuse toward the NS channels in vertical direction. Increasing Ge mole fraction of the Si 1− x Ge x S/D in the p -type FETs (PFETs) causing increasing compressive channel stress retards boron dopants diffusing from the Si 1− x Ge x S/D into the NS channels, thus increasing the V th of PFETs ( V th, p ). However, the V th, p decreases as the Ge mole fraction of the Si 1− x Ge x S/D becomes greater than 0.5 due to the higher valence band energy ( E v ) of the NS channels. On the other hand, the V th of n -type FETs (NFETs) ( V th, n ) consistently increases as the C mole fraction of the Si 1− x C x S/D increases due to monotonously retarded phosphorus dopants diffusing from the Si 1− x C x S/D into the NS channels. On the other hand, the V th, p and V th, n consistently decreases and increases, respectively, as Si/Si 0.7 Ge 0.3 intermixing becomes severer because both E v and conduction band energies ( E c ) of the NS channels become higher. In addition, the V th, p variations are more sensitive to the Si/Si 0.7 Ge 0.3 intermixing than the V th, n variations because the Ge mole fraction in NS channels affects the E v remarkably rather than the E c . As a result, the Ge atoms diffusing toward the NS channels should be carefully considered more than the C diffusion toward the NS channels for fine V th variation optimization in sub 5-nm node NSFETs." @default.
- W3009165240 created "2020-03-13" @default.
- W3009165240 creator A5034596702 @default.
- W3009165240 creator A5051115409 @default.
- W3009165240 creator A5056156000 @default.
- W3009165240 creator A5057257626 @default.
- W3009165240 date "2020-08-01" @default.
- W3009165240 modified "2023-09-25" @default.
- W3009165240 title "Threshold Voltage Variations Induced by Si1−xGex and Si1−xCx of Sub 5-nm Node Silicon Nanosheet Field-Effect Transistors" @default.
- W3009165240 doi "https://doi.org/10.1166/jnn.2020.17799" @default.
- W3009165240 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/32126641" @default.
- W3009165240 hasPublicationYear "2020" @default.
- W3009165240 type Work @default.
- W3009165240 sameAs 3009165240 @default.
- W3009165240 citedByCount "5" @default.
- W3009165240 countsByYear W30091652402020 @default.
- W3009165240 countsByYear W30091652402021 @default.
- W3009165240 countsByYear W30091652402022 @default.
- W3009165240 crossrefType "journal-article" @default.
- W3009165240 hasAuthorship W3009165240A5034596702 @default.
- W3009165240 hasAuthorship W3009165240A5051115409 @default.
- W3009165240 hasAuthorship W3009165240A5056156000 @default.
- W3009165240 hasAuthorship W3009165240A5057257626 @default.
- W3009165240 hasConcept C113196181 @default.
- W3009165240 hasConcept C119599485 @default.
- W3009165240 hasConcept C127413603 @default.
- W3009165240 hasConcept C145598152 @default.
- W3009165240 hasConcept C147789679 @default.
- W3009165240 hasConcept C165801399 @default.
- W3009165240 hasConcept C171250308 @default.
- W3009165240 hasConcept C172385210 @default.
- W3009165240 hasConcept C178790620 @default.
- W3009165240 hasConcept C185592680 @default.
- W3009165240 hasConcept C191952053 @default.
- W3009165240 hasConcept C192562407 @default.
- W3009165240 hasConcept C195370968 @default.
- W3009165240 hasConcept C36591836 @default.
- W3009165240 hasConcept C43617362 @default.
- W3009165240 hasConcept C49040817 @default.
- W3009165240 hasConcept C501308230 @default.
- W3009165240 hasConcept C51967427 @default.
- W3009165240 hasConcept C544956773 @default.
- W3009165240 hasConcept C57863236 @default.
- W3009165240 hasConcept C8010536 @default.
- W3009165240 hasConceptScore W3009165240C113196181 @default.
- W3009165240 hasConceptScore W3009165240C119599485 @default.
- W3009165240 hasConceptScore W3009165240C127413603 @default.
- W3009165240 hasConceptScore W3009165240C145598152 @default.
- W3009165240 hasConceptScore W3009165240C147789679 @default.
- W3009165240 hasConceptScore W3009165240C165801399 @default.
- W3009165240 hasConceptScore W3009165240C171250308 @default.
- W3009165240 hasConceptScore W3009165240C172385210 @default.
- W3009165240 hasConceptScore W3009165240C178790620 @default.
- W3009165240 hasConceptScore W3009165240C185592680 @default.
- W3009165240 hasConceptScore W3009165240C191952053 @default.
- W3009165240 hasConceptScore W3009165240C192562407 @default.
- W3009165240 hasConceptScore W3009165240C195370968 @default.
- W3009165240 hasConceptScore W3009165240C36591836 @default.
- W3009165240 hasConceptScore W3009165240C43617362 @default.
- W3009165240 hasConceptScore W3009165240C49040817 @default.
- W3009165240 hasConceptScore W3009165240C501308230 @default.
- W3009165240 hasConceptScore W3009165240C51967427 @default.
- W3009165240 hasConceptScore W3009165240C544956773 @default.
- W3009165240 hasConceptScore W3009165240C57863236 @default.
- W3009165240 hasConceptScore W3009165240C8010536 @default.
- W3009165240 hasIssue "8" @default.
- W3009165240 hasLocation W30091652401 @default.
- W3009165240 hasLocation W30091652402 @default.
- W3009165240 hasOpenAccess W3009165240 @default.
- W3009165240 hasPrimaryLocation W30091652401 @default.
- W3009165240 hasRelatedWork W1966205888 @default.
- W3009165240 hasRelatedWork W2029494893 @default.
- W3009165240 hasRelatedWork W2029947891 @default.
- W3009165240 hasRelatedWork W2049500690 @default.
- W3009165240 hasRelatedWork W2121761404 @default.
- W3009165240 hasRelatedWork W2123733122 @default.
- W3009165240 hasRelatedWork W3027069042 @default.
- W3009165240 hasRelatedWork W3102402566 @default.
- W3009165240 hasRelatedWork W4296773598 @default.
- W3009165240 hasRelatedWork W4299141526 @default.
- W3009165240 hasVolume "20" @default.
- W3009165240 isParatext "false" @default.
- W3009165240 isRetracted "false" @default.
- W3009165240 magId "3009165240" @default.
- W3009165240 workType "article" @default.