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- W3009553987 abstract "We demonstrate removal of homoepitaxially grown semi-polar gallium nitride (GaN) layers from the native substrates. The weak link at the interface of the epitaxial lateral overgrowth and cleavable m-plane of the respective native semi-polar plane is used to separate homoepitaxial GaN from its native substrate. Homoepitaxial GaN layers of the semi-polar planes, (101), (201), (301), (10), (20), and (30) are successfully removed. This approach allows the reuse of expensive semi-polar GaN substrates, eliminating one barrier to market introduction of superior optoelectronic devices grown with semi-polar orientations." @default.
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- W3009553987 date "2020-03-13" @default.
- W3009553987 modified "2023-10-16" @default.
- W3009553987 title "An approach to remove homoepitaxially grown GaN layers by cleavage from the substrate surface" @default.
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- W3009553987 doi "https://doi.org/10.35848/1882-0786/ab7bc9" @default.
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