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- W3009644863 abstract "We report on the investigations of the fin-shaped GaN/AlGaN field effect transistors (FinFETs) with two lateral Schottky barrier gates exactly placed at the edges of the fin-shaped transistor channel. This kind of FinFET modification (called EdgeFET) allowed us to efficiently control the current flow in two-dimensional electron gas conduction channel. Moreover, due to depletion, regions of the channel at a certain range of reverse bias form a nanowire, which is beneficial for the tunable resonant THz detection. Our studies of current-voltage characteristics and response in the sub-terahertz frequency range confirm the validity of the approach." @default.
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- W3009644863 date "2020-03-02" @default.
- W3009644863 modified "2023-09-25" @default.
- W3009644863 title "Sub-terahertz detection by fin-shaped GaN/AlGaN transistors" @default.
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- W3009644863 doi "https://doi.org/10.1117/12.2547298" @default.
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