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• W3009807316 abstract "Despite the huge number of previous studies of vacuum devices, nanoscale technologies open new paradigms. Vacuum nanodevices bring multiple advantages, such as air instead of a vacuum for the nanometric gap, strong non-linear characteristics, and a metal oxide semiconductor co-integration facility. This paper presents the manufacturing process and measured characteristics of a nano-device that uses a sub-36 nm gap between two Cr/Au nano-wires. In this way, the metal nano-wires replace the semiconductor nano-islands, while an air gap stands for the 'nothing' region of a first-time fabricated variant for a nothing on insulator device. The electron beam lithography mask-less technology is pushed to its technical limit to define a minimum 18 nm-wide gap between two Cr/Au nanowires. The main current–voltage curves are measured for this first real device called a nothing on insulator in the variant metal–air–metal, indicating 10 nA at 10 V as the optimal variant. The main connections between the measurements and technology are emphasized." @default.
• W3009807316 created "2020-03-13" @default.
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• W3009807316 date "2020-04-17" @default.
• W3009807316 modified "2023-10-17" @default.
• W3009807316 title "Manufacture of a nothing on insulator nano-structure with two Cr/Au nanowires separated by 18 nm air gap" @default.
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• W3009807316 doi "https://doi.org/10.1088/1361-6528/ab7c45" @default.
• W3009807316 hasPubMedId "https://pubmed.ncbi.nlm.nih.gov/32126529" @default.
• W3009807316 hasPublicationYear "2020" @default.
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