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• W3010351567 abstract "Spectroscopic ellipsometry and Fourier transform infrared spectroscopy were applied to extract the ultraviolet to far-infrared $(150--33333phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{ensuremath{-}1})$ complex dielectric functions of high-quality, sputtered indium-doped cadmium oxide (In:CdO) thin crystalline films on MgO substrates possessing carrier densities $({N}_{d})$ ranging from $1.1ifmmodetimeselsetexttimesfi{}{10}^{19}phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{ensuremath{-}3}$ to $4.1ifmmodetimeselsetexttimesfi{}{10}^{20}phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{ensuremath{-}3}$. A multiple oscillator fit model was used to identify and analyze the three major contributors to the dielectric function and their dependence on doping density: interband transitions in the visible, free-carrier excitations (Drude response) in the near- to far-infrared, and IR-active optic phonons in the far-infrared. More specifically, values pertinent to the complex dielectric function such as the optical band gap $({E}_{g})$, are shown here to be dependent upon carrier density, increasing from approximately 2.5--3 eV, while the high-frequency permittivity (${ensuremath{varepsilon}}_{ensuremath{infty}}$) decreases from 5.6 to 5.1 with increasing carrier density. The plasma frequency (${ensuremath{omega}}_{p}$) scales as $sqrt{{N}_{d}}$, resulting in ${ensuremath{omega}}_{p}$ values occurring within the mid- to near-IR, and the effective mass (${m}^{*}$) was also observed to exhibit doping density-dependent changes, reaching a minimum of $0.11{m}_{o}$ in unintentionally doped films ($1.1ifmmodetimeselsetexttimesfi{}{10}^{19}phantom{rule{4pt}{0ex}}mathrm{c}{mathrm{m}}^{ensuremath{-}3}$). Good quantitative agreement with prior work on polycrystalline, higher-doped CdO films is also demonstrated, illustrating the generality of the results. The analysis presented here will aid in predictive calculations for CdO-based next-generation nanophotonic and optoelectronic devices, while also providing an underlying physical description of the key properties dictating the dielectric response in this atypical semiconductor system." @default.
• W3010351567 created "2020-03-13" @default.
• W3010351567 creator A5000675782 @default.
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• W3010351567 date "2020-02-28" @default.
• W3010351567 modified "2023-10-13" @default.
• W3010351567 title "Ultraviolet to far-infrared dielectric function of <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML><mml:mrow><mml:mi>n</mml:mi></mml:mrow></mml:math> -doped cadmium oxide thin films" @default.
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• W3010351567 doi "https://doi.org/10.1103/physrevmaterials.4.025202" @default.
• W3010351567 hasPublicationYear "2020" @default.
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