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- W3010370953 abstract "This chapter describes recent trends related to advancement in the area of PA design. The PA design based on complementary metal-oxide-semiconductor (CMOS) technology has been discussed with their limitations in terms of handling high power. The circuit topology to extract more power out of metal-oxide-semiconductor (MOS) transistors while withstanding high voltage swings is also presented in this chapter. Later, the design based on III–V semiconductor technology such as GaN (gallium nitride) and GaAs (gallium arsenide) are presented with their advantages and limitations. The micro-electromechanical system (MEMS)-based reconfigurable PAs are also discussed to cater the need of upcoming trend in the development of multiband/multi-standard transmitters. The chapter discusses various challenges in extending PA design at millimeter wave. The chapter also describes various trends in high-power device packaging and some recent trends in high-power device integration and assembly." @default.
- W3010370953 created "2020-03-13" @default.
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- W3010370953 date "2020-01-01" @default.
- W3010370953 modified "2023-09-25" @default.
- W3010370953 title "Advance Materials for Power Amplifier Design and Packaging" @default.
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- W3010370953 doi "https://doi.org/10.1007/978-3-030-38866-9_6" @default.
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