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• W3010694310 abstract "Abstract Ferroelectric gating of functional materials has often suffered because ferroelectric materials are poor insulators. In this study, the recently reported ferroelectric HfO 2 , a large band‐gap oxide with excellent insulating properties, is exploited for electrostatically gating the archetypical metal–insulator transition material, VO 2 . By protecting the meta‐stable ferroelectric phase from deterioration, the ferroelectric gating is successfully demonstrated with an ultra‐thin VO 2 channel in the back‐gate geometry. The observed modulation of the VO 2 channel conductivity is originated from the ferroelectric polarization reversal in the HfO 2 gate insulator combined with the VO 2 metal–insulator transition. These results demonstrate the significant potential of ferroelectric HfO 2 for electrostatically controlling the state of matter for both fundamental research and device application." @default.
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• W3010694310 date "2020-03-20" @default.
• W3010694310 modified "2023-10-14" @default.
• W3010694310 title "Modulation of VO ₂ Metal–Insulator Transition by Ferroelectric HfO ₂ Gate Insulator" @default.
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• W3010694310 doi "https://doi.org/10.1002/aelm.201901356" @default.
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