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- W3010764942 abstract "The Mg acceptor activation mechanism and hole transport characteristics in AlGaN alloy with Mg doping concentration (∼ 10 20 cm −3 ) grown by metal–organic chemical vapor deposition (MOCVD) are systematically studied through optical and electrical properties. Emission lines of shallow oxygen donors and (V III complex) 1− as well as <?CDATA ${{rm{V}}}_{{rm{N}}}^{3+}$?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mrow> <mml:msubsup> <mml:mi mathvariant=normal>V</mml:mi> <mml:mi mathvariant=normal>N</mml:mi> <mml:mrow> <mml:mn>3</mml:mn> <mml:mo>+</mml:mo> </mml:mrow> </mml:msubsup> </mml:mrow> </mml:math> and neutral Mg acceptors are observed, which indicate that self-compensation is occurred in Mg-doped AlGaN at highly doping levels. The fitting of the temperature-dependent Hall effect data shows that the acceptor activation energy values in Mg-doped Al x Ga 1 − x N ( x = 0.23, 0.35) are 172 meV and 242 meV, and the hole concentrations at room temperature are 1.2 × 10 18 cm −3 and 3.3 × 10 17 cm −3 , respectively. Therefore, it is believed that there exists the combined effect of the Coulomb potentials of the dopants and screening of the Coulomb potentials by a high hole concentration. Moreover, due to the high ionized acceptors’ concentration and compensation ratio, the impurity conduction becomes more prominent and the valence band mobility drops sharply at low temperature." @default.
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- W3010764942 date "2020-05-01" @default.
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- W3010764942 title "Mg acceptor activation mechanism and hole transport characteristics in highly Mg-doped AlGaN alloys*" @default.
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- W3010764942 doi "https://doi.org/10.1088/1674-1056/ab7e93" @default.
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