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- W3010813818 abstract "Abstract The metal–organic vapor phase epitaxy (MOVPE) of the quaternary alloy In1-xGaxAs1-yBiy has been explored on InAs and InP substrates to determine the group III and group V incorporation kinetics and their interdependences during low temperature growth. Under the growth conditions investigated, Ga did not incorporate into the epitaxial InAs1-yBiy on the InAs substrate. In1-xGaxAs1-yBiy epilayers could be grown pseudomorphically on the InP substrate with 0.37 ≤ x ≤ 0.59 and y ≤ 0.022. Strong interactions between the Ga and In incorporation processes were observed in the In1-xGaxAs1-yBiy growth, which were attributed to the precursor gas-phase alkyl-exchange reactions and the formation of Ga-CH3 on the growth front. Bi incorporation is independent of the group III composition and the strain state of the In1-xGaxAs1-yBiy epilayers on the InP substrate. Comparisons between the In1-xGaxAs1-yBiy and the GaAs1-yBiy growth also suggest an absence of Bi surface site-blocking on the In-terminated surface. This study demonstrates the successful MOVPE growth of In1-xGaxAs1-yBiy on the InP substrate and reveals the influences of the gas-phase and surface species interactions on the quaternary alloy compositional control during the low temperature MOVPE growth." @default.
- W3010813818 created "2020-03-23" @default.
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- W3010813818 date "2020-05-01" @default.
- W3010813818 modified "2023-09-24" @default.
- W3010813818 title "Metal-organic vapor phase epitaxy of the quaternary metastable alloy In1–xGaxAs1−yBiy and its kinetics of growth" @default.
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- W3010813818 doi "https://doi.org/10.1016/j.jcrysgro.2020.125611" @default.
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