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• W3010863400 abstract "Abstract This study demonstrates atomic layer deposition of an Al 2 O 3 film on a sputtered-MoS 2 film and capacitance–voltage ( C – V ) characteristics of TiN top-gated metal–insulator–semiconductor field-effect-transistors with a sputtered-MoS 2 channel. A uniform Al 2 O 3 film was formed directly on a sputtered-MoS 2 film with no pretreatment. From chemical analysis and surface observation, it is speculated that dangling bonds on a sputtered-MoS 2 surface work as nucleation sites of Al 2 O 3 . The fabricated top-gated stacks show enhancement-mode accumulation C – V characteristics owing to the low carrier density of the MoS 2 film resulting from sputtering and sulfur-powder annealing. This study is the first step for systematic investigation and discussion on not only C – V characteristics but also carrier transport of MoS 2 films." @default.
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• W3010863400 date "2020-04-01" @default.
• W3010863400 modified "2023-09-24" @default.
• W3010863400 title "Enhancement-mode accumulation capacitance–voltage characteristics in TiN/ALD-Al₂O₃/sputtered-MoS₂ top-gated stacks" @default.
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• W3010863400 doi "https://doi.org/10.35848/1347-4065/ab7fea" @default.
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