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• W3011801464 abstract "This letter proposes a new organic trench structure which can enhance the endurance of polycrystalline silicon thin film transistors (TFTs) under mechanical bending stress. It compares conventional structure TFTs to devices with an organic trench to examine reliability after undergoing 100,000 iterations of channel width-axis (100,000’WC) compression at R = 2mm. Due to the low Young’s modulus of organic materials, stress while undergoing bending strain is desorbed to the buffer layer, which can lower the overall stress in TFTs. Furthermore, an optimal location and ideal length for such an organic trench is evaluated by mechanical bending simulation." @default.
• W3011801464 created "2020-03-23" @default.
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• W3011801464 date "2020-05-01" @default.
• W3011801464 modified "2023-10-14" @default.
• W3011801464 title "Enhancement of Mechanical Bending Stress Endurance Using an Organic Trench Structure in Foldable Polycrystalline Silicon TFTs" @default.
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• W3011801464 doi "https://doi.org/10.1109/led.2020.2980123" @default.
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