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• W3011937415 endingPage "50471" @default.
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• W3011937415 abstract "C-H diamond metal-oxide-semiconductor field effect transistors with different structures were fabricated on the same polycrystalline diamond plate. Devices A and B with 25-nm-thick high temperature (300°C) atomic layer deposition grown Al <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> dielectric have the same source-to-drain distance of 6 μm and different gate length of 2 μm and 6 μm, respectively. Both devices show ultra-high on/off ratio of over 1010 and ultra-low gate leakage of below 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-10</sup> A and continuous measurement stability. Device B with the source/drain-channel interspaces eliminated has achieved an on resistance of 46.20 Ω·mm, which is record low in the reported 6-μm H-diamond MOSFETs with the gate dielectric prepared at high temperature (≥ 300 °C). Meanwhile, device B shows larger drain current in a large portion of the linear region at VGS = -6 V, and a just slightly smaller IDmax compared with device A though its LG is three times of that of device A. A simple model of ID was used to explain the physics behind this phenomenon. In addition, the breakdown voltage is 145 V for device A and 27 V for device B, corresponding to the average breakdown field of about 0.72 MV/cm and 10.8 MV/cm, respectively." @default.
• W3011937415 created "2020-03-23" @default.
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• W3011937415 date "2020-01-01" @default.
• W3011937415 modified "2023-09-30" @default.
• W3011937415 title "Low On-Resistance H-Diamond MOSFETs With 300 °C ALD-Al₂O₃ Gate Dielectric" @default.
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• W3011937415 doi "https://doi.org/10.1109/access.2020.2979985" @default.
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