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• W3012013969 abstract "Pb(Zr 52 Ti 48 )O 3 (PZT) thin films have been grown by chemical solution deposition on 150 mm Silicon-on-Sapphire (SOS) substrates for RF MEMS applications. Film properties are compared to similar films deposited on typical Si/SiO 2 substrates. PZT films deposited on SOS show improvement in P MAX (37.8 vs. 32.1 µC/cm2) and PREM (22.7 vs. 10.9 µC/cm2) over films deposited on Si. A decrease in maximum er from 1650 (Si) to 1031 (SOS) is also noted. Crystal structure is examined using x-ray diffraction. Ferroelectric polarization hysteresis curves, dielectric constant tuning, and loss tangent are studied using fabricated capacitors. Piezoelectric coefficients calculated from cantilever LDV measurements are also presented." @default.
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• W3012013969 date "2019-07-01" @default.
• W3012013969 modified "2023-09-30" @default.
• W3012013969 title "Lead Zirconate Titanate Thin Films on Silicon-on-Sapphire Substrates" @default.
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• W3012013969 doi "https://doi.org/10.1109/isaf43169.2019.9034958" @default.
• W3012013969 hasPublicationYear "2019" @default.
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