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- W3012181581 abstract "Semiconductor nanostructures (NSs) are usually synthesized at short source-substrate distances where the substrate temperature is high using the chemical vapor deposition (CVD) technique. Herein, we report for the first time the growth of <?CDATA $beta $?> <mml:math xmlns:mml=http://www.w3.org/1998/Math/MathML overflow=scroll> <mml:mi>β</mml:mi> </mml:math> -Ga 2 O 3 NSs at low substrate temperature ∼260 °C in a CVD system when gallium (III) oxide powder was reduced to Ga vapor at 1000 °C under hydrogen atmosphere. The polycrystalline nature of the Ga 2 O 3 NSs was confirmed by high-resolution X-ray diffraction (HR-XRD) analysis. Appearance of additional diffraction planes, increasing X-ray diffraction signal strength and shift of 2 θ to smaller angles was observed with increasing hydrogen supply in the reactor. Field-emission scanning electron microscope (FE-SEM) revealed different morphologies with increasing amount of Ga 2 O 3 on the substrate. Elemental analysis by using energy dispersive X-ray spectroscopy (EDX) showed increasing Ga atoms, and Ga/O atomic ratio with increase in hydrogen gas flow rate. Optical reflectance measurements by UV–vis-NIR spectrophotometer revealed optical bandgaps ranging from 4.94 to 4.82 eV, attributed to increasing film compactness, Ga/O and oxygen vacancies on the prepared films." @default.
- W3012181581 created "2020-03-23" @default.
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- W3012181581 date "2020-01-03" @default.
- W3012181581 modified "2023-10-17" @default.
- W3012181581 title "Deposition of Gallium Oxide Nanostructures at Low Substrate Temperature by Chemical Vapor Deposition" @default.
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- W3012181581 doi "https://doi.org/10.1149/2162-8777/ab7b47" @default.
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