Matches in SemOpenAlex for { <https://semopenalex.org/work/W3012215214> ?p ?o ?g. }
- W3012215214 endingPage "137966" @default.
- W3012215214 startingPage "137966" @default.
- W3012215214 abstract "Abstract Ga-doped ZnO (GZO) films were grown by reactive co-sputtering of a Zn-GaAs target (3% area coverage of Zn by GaAs) at 375 °C with different partial pressures of oxygen. The resistivity of GZO films increases drastically from ≲10−3 Ω-cm to ~ 0.2 Ω-cm as the O2 in the sputtering atmosphere is changed from 5 % to 6 %. The films grown at 5% or lower O2 have the Ga/Zn ratio of ~ 0.1 and display low resistivity with carrier concentration ~ 1021 cm−3, while the films grown at 6% or higher O2 have lower Ga/Zn ratio of ~ 0.01 and display high resistivity with carrier concentration ~ 1019 cm−3. Extended X-ray absorption fine structure (EXAFS) measurements at Zn and Ga K-edges reveal substitutional incorporation of Ga in low resistivity films. X ray photoelectron spectroscopy (XPS) studies reveal a substantial decrease in oxygen vacancies together with increase in oxygen interstitials, in high resistivity GZO films. EXAFS measurements of the high resistivity films show a substantial increase in Ga-O and Ga-Zn bond distances and Ga-O coordination, indicating incorporation of oxygen interstitials in the vicinity of Ga. The comparison of measured and simulated X–ray absorption near edge spectra at O K-edge, together with XPS and EXAFS results, provides adequate experimental evidence of the presence of acceptor type (GaZn+Oi) defect complex, which cause carrier compensation in high resistivity films." @default.
- W3012215214 created "2020-03-23" @default.
- W3012215214 creator A5045065648 @default.
- W3012215214 creator A5077867504 @default.
- W3012215214 creator A5083501201 @default.
- W3012215214 creator A5088564145 @default.
- W3012215214 creator A5088610809 @default.
- W3012215214 creator A5088696445 @default.
- W3012215214 date "2020-05-01" @default.
- W3012215214 modified "2023-10-18" @default.
- W3012215214 title "X-ray absorption spectroscopy study of Ga-doping in reactively sputtered ZnO films" @default.
- W3012215214 cites W1695250918 @default.
- W3012215214 cites W1963892974 @default.
- W3012215214 cites W1967652077 @default.
- W3012215214 cites W1970609092 @default.
- W3012215214 cites W1972528599 @default.
- W3012215214 cites W1973308044 @default.
- W3012215214 cites W1973316716 @default.
- W3012215214 cites W1975169212 @default.
- W3012215214 cites W1978554010 @default.
- W3012215214 cites W1981006986 @default.
- W3012215214 cites W1982193068 @default.
- W3012215214 cites W1983911872 @default.
- W3012215214 cites W1989486656 @default.
- W3012215214 cites W1989612970 @default.
- W3012215214 cites W1993438825 @default.
- W3012215214 cites W1996970875 @default.
- W3012215214 cites W1997759408 @default.
- W3012215214 cites W2004675634 @default.
- W3012215214 cites W2007065882 @default.
- W3012215214 cites W2008221506 @default.
- W3012215214 cites W2008314244 @default.
- W3012215214 cites W2010030075 @default.
- W3012215214 cites W2010948085 @default.
- W3012215214 cites W2011144730 @default.
- W3012215214 cites W2013589211 @default.
- W3012215214 cites W2017832731 @default.
- W3012215214 cites W2019213224 @default.
- W3012215214 cites W2027469453 @default.
- W3012215214 cites W2032051328 @default.
- W3012215214 cites W2036709203 @default.
- W3012215214 cites W2044955053 @default.
- W3012215214 cites W2045883155 @default.
- W3012215214 cites W2047349658 @default.
- W3012215214 cites W2051955688 @default.
- W3012215214 cites W2060237568 @default.
- W3012215214 cites W2068073342 @default.
- W3012215214 cites W2069194786 @default.
- W3012215214 cites W2070175293 @default.
- W3012215214 cites W2075634327 @default.
- W3012215214 cites W2079223742 @default.
- W3012215214 cites W2079652780 @default.
- W3012215214 cites W2080171874 @default.
- W3012215214 cites W2080240036 @default.
- W3012215214 cites W2082356055 @default.
- W3012215214 cites W2089341011 @default.
- W3012215214 cites W2091692989 @default.
- W3012215214 cites W2092013061 @default.
- W3012215214 cites W2109146548 @default.
- W3012215214 cites W2109622617 @default.
- W3012215214 cites W2121629039 @default.
- W3012215214 cites W2158378244 @default.
- W3012215214 cites W2167590372 @default.
- W3012215214 cites W2334908915 @default.
- W3012215214 cites W2336684287 @default.
- W3012215214 cites W2519960915 @default.
- W3012215214 cites W2778957900 @default.
- W3012215214 cites W2794288171 @default.
- W3012215214 cites W2797502172 @default.
- W3012215214 cites W2962995198 @default.
- W3012215214 doi "https://doi.org/10.1016/j.tsf.2020.137966" @default.
- W3012215214 hasPublicationYear "2020" @default.
- W3012215214 type Work @default.
- W3012215214 sameAs 3012215214 @default.
- W3012215214 citedByCount "10" @default.
- W3012215214 countsByYear W30122152142021 @default.
- W3012215214 countsByYear W30122152142022 @default.
- W3012215214 countsByYear W30122152142023 @default.
- W3012215214 crossrefType "journal-article" @default.
- W3012215214 hasAuthorship W3012215214A5045065648 @default.
- W3012215214 hasAuthorship W3012215214A5077867504 @default.
- W3012215214 hasAuthorship W3012215214A5083501201 @default.
- W3012215214 hasAuthorship W3012215214A5088564145 @default.
- W3012215214 hasAuthorship W3012215214A5088610809 @default.
- W3012215214 hasAuthorship W3012215214A5088696445 @default.
- W3012215214 hasConcept C113196181 @default.
- W3012215214 hasConcept C119824511 @default.
- W3012215214 hasConcept C120665830 @default.
- W3012215214 hasConcept C121332964 @default.
- W3012215214 hasConcept C125287762 @default.
- W3012215214 hasConcept C159985019 @default.
- W3012215214 hasConcept C171250308 @default.
- W3012215214 hasConcept C185592680 @default.
- W3012215214 hasConcept C19067145 @default.
- W3012215214 hasConcept C192562407 @default.
- W3012215214 hasConcept C32891209 @default.
- W3012215214 hasConcept C43617362 @default.
- W3012215214 hasConcept C49040817 @default.