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- W3012497400 abstract "A remote plasma enhanced chemical vapor deposition process using GeH4, SiH4 and SnCl4 precursors has been developed for epitaxial growth of group-IV alloys directly on Si (001) substrates, without the need for buffer layers. X-ray diffraction measurements of a representative Ge1-xSnx sample which is 233 nm thick, with x = 9.6% show it to be highly oriented along the [001] direction and nearly relaxed, with 0.37% compressive strain. Ellipsometry measurements provide a pseudo-dielectric function which is well fitted by a 3-layer (substrate/alloy/surface oxide) model. Cross-sectional transmission-electron-microscope images show a highly defective interface layer, ~ 60 nm thick, containing edge dislocations and stacking faults; above this layer, the lattice is well-ordered, with a much lower density of defects. Atomic force microscopy measurements show an RMS roughness of 1.2 nm for this film." @default.
- W3012497400 created "2020-03-23" @default.
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- W3012497400 date "2020-03-18" @default.
- W3012497400 modified "2023-10-11" @default.
- W3012497400 title "Process for Growth of Group-IV Alloys Containing Tin by Remote Plasma Enhanced Chemical Vapor Deposition" @default.
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- W3012497400 doi "https://doi.org/10.3389/fmats.2020.00044" @default.
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