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- W3013030288 abstract "InGaAs/InP heterojunction bipolar transistors (HBTs) have enabled record results in RF, mm-wave, and high-speed mixed signal circuit designs, due to their simultaneously high ft and fmax cutoff frequencies [1]. For millimeter-wave power amplification, InP HBTs offer wide fractional bandwidths and high efficiencies compared to GaN HEMT technologies, while typically operating at lower power densities (1-2 W/mm normalized to emitter length) and output power levels . To increase the RF power density of InP HBTs, we wish to increase the utilization of the active device area in a fixed footprint, while managing device self-heating. Decoupling the HBT from the InP substrate allows for reduced device thermal resistance by removing high thermal resistivity ternary materials, and the InP substrate itself [2], [3]. Microtransfer printing (MTP) enables devices to be removed from their native substrate, and placed accurately (~1 micron placement error) on another surface [4]. Here, we report results on microtransfer printed InP HBTs placed directly on a metallic sub-collector ohmic contact deposited on a high-thermal conductivity SiC substrate. The HBTs utilize a fine-pitch array of emitter fingers on a single base-collector mesa to increase the HBT active-area utilization while maintaining RF performance. Load-pull measurements at 30 GHz show a increase in RF power density compared to conventional mesa-HBTs with a similar device footprint." @default.
- W3013030288 created "2020-04-03" @default.
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- W3013030288 date "2019-06-01" @default.
- W3013030288 modified "2023-10-18" @default.
- W3013030288 title "Microtransfer-Printed InGaAs/InP HBTs Utilizing a Vertical Metal Sub-Collector Contact" @default.
- W3013030288 cites W1913425211 @default.
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- W3013030288 doi "https://doi.org/10.1109/drc46940.2019.9046426" @default.
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