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- W3013194474 abstract "In this paper, we demonstrate retention improvement in nonvolatile charge-trapping memory cells by tunneling oxide engineering with Al2O3. By utilizing SiO2/Al2O3/SiO2 layers for the tunneling oxide, it is shown that the threshold voltage window after 10 years is significantly improved from 0.78 V to 4.18 V through Synopsys Sentaurus technology computer-aided design simulation. In addition, retention improvement from incorporating SiO2/Al2O3/SiO2 tunneling layers is compared with that using SiO2/Si3N4/SiO2 tunneling layers. The relationship between charge-trapping layer thickness and trapped charge emission is also investigated. As a result, we open up the possibility of using HfO2 as a charge-trapping layer with significant reliability enhancement." @default.
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- W3013194474 date "2020-06-01" @default.
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- W3013194474 title "Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub>/SiO<sub>2</sub>/Al<sub>2</sub>O<sub>3</sub>/SiO<sub>2</sub>/Si structure" @default.
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- W3013194474 doi "https://doi.org/10.35848/1347-4065/ab8275" @default.
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