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- W3014563964 abstract "Homoepitaxial growth of a thick AlN layer on a 2-in.-diameter single crystal AlN(0 0 0 1) substrate prepared by physical vapor transport (PVT) was investigated by hydride vapor phase epitaxy (HVPE). A water-clear crack-free homoepitaxial layer with a thickness of 500 μm or more could be grown on the entire surface of the PVT-AlN substrate. No degradation of crystallinity was observed during homoepitaxial growth. X-ray rocking curve measurements of the homoepitaxial layer showed small full widths at half maximum of 11–16 arcsec, the same as those for the PVT substrates. A freestanding AlN substrate prepared from the homoepitaxial layer showed high optical transmittance in the deep ultraviolet region owing to low impurity concentrations." @default.
- W3014563964 created "2020-04-10" @default.
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- W3014563964 date "2020-06-01" @default.
- W3014563964 modified "2023-10-18" @default.
- W3014563964 title "Homoepitaxial growth of AlN on a 2-in.-diameter AlN single crystal substrate by hydride vapor phase epitaxy" @default.
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- W3014563964 doi "https://doi.org/10.1016/j.jcrysgro.2020.125644" @default.
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