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- W3014762416 abstract "In this letter, a model that predicates the degradation of 4H-SiC power metal-oxide-semiconductor field-effect transistors under repetitive avalanche stress is proposed. Since positive charges are injected into the gate oxide interface of the JFET region, the gate-drain capacitance (C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gd</sub> ) is chosen as the targeted parameter to quantify the avalanche induced degradation. The relationship between the increment of the C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gd</sub> and the injected charge density is calculated and validated to demonstrate the rationale of the model. It is found that the increment of C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>gd</sub> has a linear relationship with the logarithm of the total avalanche energy (E <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>AV</sub> ) dissipated on the device. Excellent agreement is also achieved between the simulated degraded data and the measured one, further proving the accuracy of the proposed degradation model." @default.
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- W3014762416 date "2020-11-01" @default.
- W3014762416 modified "2023-10-17" @default.
- W3014762416 title "Modeling Avalanche Induced Degradation for 4H-SiC Power MOSFETs" @default.
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- W3014762416 doi "https://doi.org/10.1109/tpel.2020.2984650" @default.
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