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• W3014860292 abstract "We propose and demonstrate an unconventional method suitable for releasing microelectromechanical systems devices containing an Al layer by wet etching using SiO2 as a sacrificial layer. We used 48% HF solution in combination with 20% oleum to keep the HF solution water-free and thus to prevent attack of the Al layer, achieving an outstanding etch rate of thermally grown SiO2 of ≈1 µm·min−1. We also verified that this etching solution only minimally affected the Al layer, as the chip immersion for ≈9 min increased the Al layer sheet resistance by only ≈7.6%. The proposed etching method was performed in an ordinary fume hood in a polytetrafluorethylene beaker at elevated temperature of ≈70 °C using water bath on a hotplate. It allowed removal of the SiO2 sacrificial layer in the presence of Al without the necessity of handling highly toxic HF gas." @default.
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• W3014860292 date "2020-03-31" @default.
• W3014860292 modified "2023-10-18" @default.
• W3014860292 title "Infinite Selectivity of Wet SiO2 Etching in Respect to Al" @default.
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• W3014860292 doi "https://doi.org/10.3390/mi11040365" @default.
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