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- W3015451617 abstract "RF MEMS switches are well known to exhibit performance superior to solid-state devices. However, electromechanical issues, such as repeatability and higher pull-in voltage, are a matter of concern. MEMS switches generally consist of metallic beams which curl up or down based on stresses in the structure. Stress-induced curling-up phenomenon, in such structures, increases the gap between the actuating electrode and the freely suspended metallic structure which in turn increases the pull-in voltage. This article focuses on simulations and curve fitting to analyze the effect of stress on pull-in voltage. The pull-in voltage of the switch is proportional to stress, and accordingly, its dependence on in-built stress and Young's modulus is analyzed. In addition to mechanical analysis, RF response of the single pole double throw (SPDT) switch is discussed as a case study. Measured stress and pull-in voltage of the SPDT switch is 50 MPa and 16 V. In the presence of stress, the curled-up cantilever switch shows measured isolation better than 31 dB for dc to 10-GHz range." @default.
- W3015451617 created "2020-04-17" @default.
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- W3015451617 date "2020-05-01" @default.
- W3015451617 modified "2023-10-07" @default.
- W3015451617 title "Effect of Stress on Pull-in Voltage of RF MEMS SPDT Switch" @default.
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- W3015451617 doi "https://doi.org/10.1109/ted.2020.2982667" @default.
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