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• W3015486995 abstract "3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4]" @default.
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• W3015486995 date "2020-02-01" @default.
• W3015486995 modified "2023-10-18" @default.
• W3015486995 title "13.1 A 1Tb 4b/cell NAND Flash Memory with t_PROG=2ms, t_R=110µs and 1.2Gb/s High-Speed IO Rate" @default.
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• W3015486995 doi "https://doi.org/10.1109/isscc19947.2020.9063053" @default.
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