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• W3015779987 abstract "The present work reports on the hydrogen gas detection properties of Pt-AlGaN/GaN high electron mobility transistor (HEMT) sensors with recessed gate structure. Devices with gate recess depths from 5 to 15 nm were fabricated using a precision cyclic etching method, examined with AFM, STEM and EDS, and tested towards H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> response at high temperature. With increasing recess depth, the threshold voltage ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${V}_{textit {TH}}$ </tex-math></inline-formula> ) shifted from −1.57 to 1.49 V. A shallow recess (5 nm) resulted in a 1.03 mA increase in signal variation ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$Delta {I}_{textit {DS}}$ </tex-math></inline-formula> ), while a deep recess (15 nm) resulted in the highest sensing response ( <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>${S}$ </tex-math></inline-formula> ) of 145.8% towards 300 ppm H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> as compared to reference sensors without gate recess. Transient measurements demonstrated reversible H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> response for all tested devices. The response and recovery time towards 250 ppm gradually decreased from 7.3 to 2.5 min and from 29.2 to 8.85 min going from 0 nm to 15 nm recess depth. The power consumption of the sensors reduced with increasing recess depth from 146.6 to 2.95 mW." @default.
• W3015779987 created "2020-04-17" @default.
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• W3015779987 date "2020-08-15" @default.
• W3015779987 modified "2023-10-10" @default.
• W3015779987 title "The Impact of Gate Recess on the H₂ Detection Properties of Pt-AlGaN/GaN HEMT Sensors" @default.
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• W3015779987 doi "https://doi.org/10.1109/jsen.2020.2987061" @default.
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