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- W3016237718 abstract "This paper reports on the implementation of a capacitive in-plane Lamé mode resonator in 65 μm-thick monocrystalline 4H silicon carbide on insulator (SiCOI) with ultra-low dissipation. Boasting the highest f·Q in Lamé mode resonators to date, this work is a stepping stone toward realizing a myriad of high-performance instruments and sensors in monocrystalline SiC. In addition to providing chemical and environmental robustness, SiC exhibits extremely low levels of intrinsic dissipation, potentially enabling f·Qs 30× higher than those achievable in silicon (Si). However, attaining quantum-limited microresonators demands scrupulous processing and careful, deliberate design. With this in view, Lamé mode square resonators are excellent candidates to probe the fundamental phonon dissipation limits of SiC. Acoustically-engineered anchoring tethers composed of 1D phononic crystal (PnC) strips localize the acoustic vibration, limiting losses to the substrate. Electrostatically-transduced Lamé mode resonators are fabricated by deep reactive ion etching (DRIE) of fusion bonded SiCOI substrates, displaying a Q-factor of 20 Million (M) at 6.27 MHz with f·Q=1.25 ×10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>14</sup> Hz, over 4× above the Akhiezer limit set in (100) Si substrates. With further process optimization, these resonators can theoretically achieve Qs in excess of 100M at room temperature. Across the temperature range -45° to 85°C, the thermal coefficient of frequency (TCF) of on-axis 4H-SiC Lamé modes is -12 ppm/°C." @default.
- W3016237718 created "2020-04-17" @default.
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- W3016237718 date "2020-01-01" @default.
- W3016237718 modified "2023-09-27" @default.
- W3016237718 title "Capacitive Lamé Mode Resonators in $65 mu mathrm{m}$-Thick Monocrystalline Silicon Carbide with Q-Factors Exceeding 20 Million" @default.
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- W3016237718 doi "https://doi.org/10.1109/mems46641.2020.9056301" @default.
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