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- W3016239898 abstract "Using finite-difference time-domain method, the light extraction efficiency (LEE) of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) is investigated. Simulation results show that compared to flat sapphire substrate, the nano-patterned sapphire substrate (NPSS) expands the extraction angles of top surface and sidewalls. As a result, the LEE of transverse-magnetic (TM) polarized light is improved significantly. Roughening on the backside of n-AlGaN surface significantly enhances the LEE of top surface of thin-film flip-chip DUV LEDs. However, the LEE of sidewalls of thin-film flip-chip DUV LEDs is greatly weakened. For bare DUV LED, the LEE of flip-chip LED on NPSS is estimated to be about 15%, which is around 50% higher than that of thin-film flip-chip DUV LED with roughening on the backside of n-AlGaN surface." @default.
- W3016239898 created "2020-04-17" @default.
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- W3016239898 date "2020-04-09" @default.
- W3016239898 modified "2023-09-23" @default.
- W3016239898 title "Light Extraction Efficiency Optimization of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes" @default.
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- W3016239898 doi "https://doi.org/10.1149/2162-8777/ab85c0" @default.
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