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- W3016985373 abstract "The formation of cavities in silicon carbide is vitally useful to “smart-cut” and metal gettering in semiconductor industry. In this study, cavities and extended defects formed in helium (He) ions implanted 6H-SiC at room temperature (RT) and 750 °C followed by annealing at 1500 °C are investigated by a combination of transmission electron microscopy and high-resolution electron microscopy. The observed cavities and extended defects are related to the implantation temperature. Heterogeneously distributed cavities and extended defects are observed in the helium-implanted 6H-SiC at RT, while homogeneously distributed cavities and extended defects are formed after He-implanted 6H-SiC at 750 °C. The possible reasons are discussed." @default.
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- W3016985373 date "2020-10-01" @default.
- W3016985373 modified "2023-10-18" @default.
- W3016985373 title "Comparison of cavities and extended defects formed in helium-implanted 6H-SiC at room temperature and 750 °C*" @default.
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- W3016985373 doi "https://doi.org/10.1088/1674-1056/ab8abc" @default.
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