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- W3017572009 abstract "Over the years, the implementation of oxide-contained thin-film transistors (TFTs) have been magnified deliberately. Aside from empowering faster TFT response, semiconducting oxides guarantee to boost up TFT disciplines to power amplifiers or accomplishment of flat panel display in pliable electronics for authentic operations and for making noticeably economical production as well. ZnO is the most enormously investigated semiconducting oxide material in pliable electronics as with it noticeably economical fabrication at minimum processing temperature is possible. Receiving cognizance of the ZnO based TFTs, the differences in output characteristics of single and dual gate TFT structures have been investigated by varying the gate voltages using 2D numerical device simulator ATLASTM for two different device structures. Based on the transfer characteristics, a comparative study on the performance parameters of both the single and dual gate TFTs have been figured out in relation to threshold voltage, drain current, mobility, on-off ratio, subthreshold swing and transconductance with respect to the reported literatures." @default.
- W3017572009 created "2020-05-01" @default.
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- W3017572009 date "2020-02-01" @default.
- W3017572009 modified "2023-10-02" @default.
- W3017572009 title "ZnO Schottky Thin Film Transistors: Single Gate and Dual Gate Frameworks and Electrical Characterizations: A Comparative Analysis" @default.
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- W3017572009 doi "https://doi.org/10.1109/icitiit49094.2020.9071547" @default.
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