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- W3018656670 abstract "Squeeze-film damping due to compressed thin-film gas comprises both the viscous and elastic effects. Based on the latter, this work reports two capacitively-transduced resonant pressure sensors implemented in a complementary metal oxide semiconductor (CMOS) process to provide sensor miniaturization, integration and sensitivity enhancement. Post-CMOS fabrication is simplified as a sealed membrane in conventional pressure sensors is not required. The squeeze-film elastic effect enhanced by the narrow sub- $mu text{m}$ gap leads to improved sensitivity and reduced sensor size. The two designs have resonant plates of $200times200$ and $100times 100,,mu text{m}^{2}$ , and demonstrate sensitivities of 0.77 and 5.34 Hz/Pa, respectively." @default.
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- W3018656670 date "2020-09-01" @default.
- W3018656670 modified "2023-09-24" @default.
- W3018656670 title "Development of CMOS Micromachined Capacitive Squeeze-Film Pressure Sensors" @default.
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- W3018656670 doi "https://doi.org/10.1109/jsen.2020.2990187" @default.
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