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- W3019779922 abstract "A Photonic MOSFET includes a low series resistance semiconductor laser or LED diode in the drain region [1], and a photon sensor (Avalanche Photo Diode) near the channel / drain region [2]. MOSFET, Lasers, and APDs are integrated as one transistor. When a gate voltage and a drain voltage are applied, both the laser and MOSFET are on. Light from the laser is absorbed by the APD to achieve higher output drain current and speed, with the avalanche breakdown current. When the MOSFET is off, the laser is also turned off. In this paper we will focus on the RF performance of sub-10nm Photonic CMOS technology, including information of series resistance and capacitance, cut-off frequency, avalanche breakdown voltage, and other critical DC / AC parameters. The goal is to improve the performance of power RF ASICs for radar electronics. Based on these data, we will also discuss other potential applications, such as Photon Counting Image Sensors, and Regulator for pulsed and CW high power lasers." @default.
- W3019779922 created "2020-05-01" @default.
- W3019779922 creator A5075285289 @default.
- W3019779922 date "2020-04-23" @default.
- W3019779922 modified "2023-09-24" @default.
- W3019779922 title "Photonic CMOS technology: Regulator/controller for high power semiconductor lasers, photon sensors, high-speed mixed-signal RF ASICs for radar electronics, and laser signal multiplexing" @default.
- W3019779922 doi "https://doi.org/10.1117/12.2554411" @default.
- W3019779922 hasPublicationYear "2020" @default.
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