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- W3020819512 abstract "Integrating silicon and III-nitride technologies for high-speed and large bandwidth communication demands optically interconnected active components that detect, process, and emit photons and electrons. It is imperative that multifunctional materials can enhance the performance and simplify fabrication of such devices. Spontaneously grown GaN in the nanowall network (NwN) architecture simultaneously displays unprecedented optical and electrical properties. A two-order increase in band-edge emission makes it suitable for high-brightness light-emitting diodes and laser applications. Decorating this NwN with silver nanoparticles further enhances emission through plasmonic interactions and renders it an excellent surface-enhanced Raman spectroscopy substrate for biomolecular detection. The observation of very high electron mobility (approximately 10 4 cm 2 /Vs) and large phase-coherence length (60 μm) is a consequence of two-dimensional (2D) electron gas formation applicable for high electron mobility transistors. Detecting ballistic transport in the nanowalls confirms proximity-induced superconductivity (<5 K and 8 T). Charge separation properties render it a device material for UV photodetectors, photoanodes for water splitting, and thermionic field emitters." @default.
- W3020819512 created "2020-05-13" @default.
- W3020819512 creator A5003115410 @default.
- W3020819512 creator A5032299227 @default.
- W3020819512 creator A5084380110 @default.
- W3020819512 date "2020-07-01" @default.
- W3020819512 modified "2023-10-16" @default.
- W3020819512 title "Morphology-Related Functionality in Nanoarchitectured GaN" @default.
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- W3020819512 doi "https://doi.org/10.1146/annurev-matsci-081919-014810" @default.
- W3020819512 hasPublicationYear "2020" @default.